型号:

NTD3055L170T4G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:MOSFET N-CH 60V 9A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NTD3055L170T4G PDF
产品变化通告 Product Obsolescence 08/Apr/2011
标准包装 2,500
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 9A
开态Rds(最大)@ Id, Vgs @ 25° C 170 毫欧 @ 4.5A,5V
Id 时的 Vgs(th)(最大) 2V @ 250µA
闸电荷(Qg) @ Vgs 10nC @ 5V
输入电容 (Ciss) @ Vds 275pF @ 25V
功率 - 最大 1.5W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 DPAK-3
包装 带卷 (TR)
其它名称 NTD3055L170T4GOS
NTD3055L170T4GOS-ND
NTD3055L170T4GOSTR
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